SiGe/Si heterostructures produced by double-energy Si[sup +] and Ge[sup +], and Ge[sup +] and Ge[sup 2+] ion implantations-Reference-Cited by-同舟云学术

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SiGe/Si heterostructures produced by double-energy Si[sup +] and Ge[sup +], and Ge[sup +] and Ge[sup 2+] ion implantations

Published:1998-09 Issue:5 Volume:16 Page:2629
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Xia Zheng

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant;Journal of Applied Physics;2022-07-21

2. Indium implantation and annealing of GaN: Lattice damage and recovery;physica status solidi (c);2010-01

3. N – K edge NEXAFS study of the defects induced by indium implantation in GaN;Journal of Physics: Conference Series;2009-11-01

4. X-ray absorption fine structure study of In implanted GaN: Effect of annealing;Materials Science and Engineering: B;2008-08

5. Advances in field emission displays phosphors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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