N – K edge NEXAFS study of the defects induced by indium implantation in GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/190/i=1/a=012065/pdf
Reference14 articles.
1. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
2. Si/Gex Si1−x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width
3. Characterization of SiGe/Si heterostructures formed by Ge+and C+implantation
4. SiGe/Si heterostructures produced by double-energy Si[sup +] and Ge[sup +], and Ge[sup +] and Ge[sup 2+] ion implantations
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