In x Ga 1-x N nucleation by In+ ion implantation into GaN-Reference-Cited by-同舟云学术

In x Ga 1-x N nucleation by In+ ion implantation into GaN

Published:2017-12 Issue: Volume:413 Page:62-67
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hernández-Gutiérrez C.A.,Kudriavtsev Yu.,Cardona Dagoberto,Guillén-Cervantes A.,Santana-Rodríguez G.,Escobosa A.,Hernández-Hernández Luis Alberto,López-López M.

Funder

Consejo Nacional de Ciencia y tecnología (CONACYT)

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

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3. P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600nm;Valdueza-Felip;Appl. Phys. Lett.,2000

4. When group-III nitrides go infrared: new properties and perspectives;Wu;J. Appl. Phys.,2009

5. Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells;Yamamoto;Phys. Status Solidi C,2010

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