Author:
Katsikini M.,Pinakidou F.,Paloura E.C.,Boscherini F.,Wendler E.,Wesch W.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Group III-nitride Semiconductor Compounds: Physics and Applications, edited by B. Gil, Oxford, Clarendon, 1998.
2. Synthesis of GaN quantum dots by ion implantation in dielectrics
3. A.B. Denison, L.J. Hope-Weeks, R.W. Meulenberg, L.J. Terminello, in Introduction to Nanoscale Science and Technology, edited by Massimiliano Di Ventra (Kluwer Academic Publishers, Boston, 2004), p. 194–198.
4. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
5. Si/Gex Si1−x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width
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