Author:
Oehrlein G. S.,Clabes J. G.,Coyle G. J.,Tsang J. C.,Lee Y. H.
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
12 articles.
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1. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
2. Impact of plasma damage on cobalt silicidation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07
3. Analysis of SiO2-to-Si3N4 selectivity in reactive ion etching using additional O2 gas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-01
4. Depth distribution of plasma induced damage and dislocation generation due to an interaction of subsequent oxidation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-05
5. Effect of plasma-induced damage on interfacial reactions of titanium thin films on silicon surfaces;Applied Physics Letters;2000-04-24