Depth distribution of plasma induced damage and dislocation generation due to an interaction of subsequent oxidation-Reference-Cited by-同舟云学术

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Depth distribution of plasma induced damage and dislocation generation due to an interaction of subsequent oxidation

Published:2000-05 Issue:3 Volume:18 Page:830-834
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Yamaguchi T.,Sasaki T.,Nikoh H.,Ito T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582263

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

2. Impact of plasma damage on cobalt silicidation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07

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