Effect of plasma-induced damage on interfacial reactions of titanium thin films on silicon surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126345
Reference12 articles.
1. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
2. Surface nucleation of Ti silicides at elevated temperatures
3. Summary Abstract: Reactive ion‐etching‐related Si surface residues and subsurface disorder
4. Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
5. Study of reactive‐ion‐etch‐induced lattice damage in silicon by Ar, CF4, NF3, and CHF3plasmas
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications;Thin Solid Films;2014-01
2. Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si〈1 0 0〉;Materials Research Bulletin;2003-11
3. Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces;Thin Solid Films;2001-09
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