Study of reactive‐ion‐etch‐induced lattice damage in silicon by Ar, CF4, NF3, and CHF3plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341713
Reference14 articles.
1. Silicon Damage Caused by Hydrogen Containing Plasmas
2. Observation of boron acceptor neutralization in silicon produced by CF4reactive ion etching or Ar ion beam etching
3. RIE Contamination of Etched Silicon Surfaces
4. Study of Breakdown Fields of Oxides Grown on Reactive Ion Etched Silicon Surface: Improvement of Breakdown Limits by Oxidation of the Surface
5. Effect of Dry Etching of a Thermal Oxide on Subsequent Growth and Properties of Thin Oxides (≃ 80 Å)
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