Analysis of SiO2-to-Si3N4 selectivity in reactive ion etching using additional O2 gas-Reference-Cited by-同舟云学术

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Analysis of SiO2-to-Si3N4 selectivity in reactive ion etching using additional O2 gas

Published:2002-01 Issue:1 Volume:20 Page:117-124
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Matsui Miyako,Uchida Fumihiko,Kojima Masayuki,Tokunaga Takafumi,Yano Fumiko,Hasegawa Masaki

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1426362

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