Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.573631
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Amorphous Mo-N and Mo-Si-N films in microelectromechanical systems;Fatigue Fracture of Engineering Materials and Structures;2005-08
2. Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. Chemically vapour-deposited Mo/Re double-layer coating on graphite at elevated temperatures;Journal of the Less Common Metals;1989-07
4. The Auger electron, Rutherford backscattering, secondary neutral mass, and secondary ion mass spectroscopies characterization of a W/TiNy/TiSiz/Si barrier structure for use in 1.0‐μm very large scale integrated circuit contacts;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05
5. Interfacial reactions between Al and RuO2, MoOxand WNxdiffusion barriers on Si;Surface and Interface Analysis;1989-01
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