The Auger electron, Rutherford backscattering, secondary neutral mass, and secondary ion mass spectroscopies characterization of a W/TiNy/TiSiz/Si barrier structure for use in 1.0‐μm very large scale integrated circuit contacts
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Published:1989-05
Issue:3
Volume:7
Page:1596-1600
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ISSN:0734-2101
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Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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language:en
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Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Author:
Grove C. L.,Gregory R. B.,Hance R. L.,Sun S. W.,Kelly N.
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
4 articles.
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1. Semiconductor Contact Technology;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
2. Auger Spectroscopy;digital Encyclopedia of Applied Physics;2003-04-15
3. Atomic Spectrometry Update—Inorganic Mass Spectrometry and X-Ray Fluorescence Spectrometry;J. Anal. At. Spectrom.;1990
4. Atomic Spectrometry Update—References;J. Anal. At. Spectrom.;1990