Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations-Reference-Cited by-同舟云学术

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Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations

Published:2005 Issue:5 Volume:23 Page:1984
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Rhallabi A.,Gaillard M.,Elmonser L.,Marcos G.,Talneau Anne,Pommereau F.,Pagnod-Rossiaux Ph.,Landesman J. P.,Bouadma N.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation of III/V semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance;Plasma Science and Technology;2017-10-24

2. Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11

3. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-03

4. Modeling of InP Etching Under ICP Cl2 /Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution;Plasma Processes and Polymers;2012-12-21

5. Ion collision cross sections with transport and reaction coefficients in Ar, Cl2and N2and their mixtures for photonic crystal applications;Journal of Physics D: Applied Physics;2010-12-16

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