Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge-Reference-Cited by-同舟云学术

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Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge

Published:2016-11 Issue:6 Volume:34 Page:061306
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Haidar Yehya,Rhallabi Ahmed,Pateau Amand,Mokrani Arezki,Taher Fadia,Roqueta Fabrice,Boufnichel Mohamed

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4966606

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiscale Simulations for Defect-Controlled Processing of Group IV Materials;Crystals;2022-11-24

2. Multiscale Simulations of Plasma Etching in Silicon Carbide Structures;Materials Science Forum;2022-05-31

3. Analysis of optical emission spectroscopy data during silicon etching in SF6/O2/Ar plasma;Plasma Science and Technology;2021-10-12

4. Plasma processing for advanced microelectronics beyond CMOS;Journal of Applied Physics;2021-08-28

5. Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption;Russian Microelectronics;2021-01

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