Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors-Reference-Cited by-同舟云学术

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Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

Published:2009 Issue:1 Volume:27 Page:389
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Dueñas S.,Castán H.,Garcia H.,Gómez A.,Bailón L.,Kukli K.,Niinistö J.,Ritala M.,Leskelä M.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Utilizing tertiary butyl iodide as an effective film quality enhancing agent for atomic layer deposition of HfO2 dielectric thin films;AIP Advances;2021-07-01

2. Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics;Materials Science in Semiconductor Processing;2017-08

3. Anodic dissolution behavior of zirconium in Bun4NBr-containing isopropanol solution;Transactions of Nonferrous Metals Society of China;2016-10

4. Wet chemical methods for producing mixing crystalline phase ZrO 2 thin film;Applied Surface Science;2016-07

5. Atomic Layer Deposition and Characterization of Dysprosium-Doped Zirconium Oxide Thin Films;Chemical Vapor Deposition;2015-09

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