Utilizing tertiary butyl iodide as an effective film quality enhancing agent for atomic layer deposition of HfO2 dielectric thin films
Author:
Affiliation:
1. Thin Film Material Development Team, Soulbrain, 14-102 Gongdan-Gil, Gongju 32598, Republic of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0055847
Reference22 articles.
1. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications
2. High dielectric constant oxides
3. Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO2–Based High-k Dielectrics
4. Microstructural evolution of ZrO2–HfO2 nanolaminate structures grown by atomic layer deposition
5. Evaluation of high thermal stability cyclopentadienyl Hf precursors with H2O as a co-reactant for advanced gate logic applications
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1. Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition;Advanced Electronic Materials;2023-12-18
2. Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition;Journal of Alloys and Compounds;2022-12
3. Development of nanometer-thick graphite film extreme ultraviolet pellicle with hydrogen-resistant TiN capping layer;Materials Research Express;2022-06-01
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