Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics-Reference-Cited by-同舟云学术

Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics

Published:2017-08 Issue: Volume:67 Page:84-91
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hung Chien-Hsiung,Wang Shui-Jinn,Liu Pang-Yi,Wu Chien-Hung,Yan Hao-Ping,Wu Nai-Sheng,Lin Tseng-Hsing

Funder

MOST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference62 articles.

1. Development of IGZO TFTs and their applications to next‐generation flat‐panel displays

2. Amorphous-oxide TFT backplane for large-sized AMOLED TVs

3. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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