Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements-Reference-Cited by-同舟云学术

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Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements

Published:2010-03 Issue:2 Volume:28 Page:360-372
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Curley G. A.,Gatilova L.,Guilet S.,Bouchoule S.,Gogna G. S.,Sirse N.,Karkari S.,Booth J. P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3330766

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