Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar

Author:

Efremov A. M.,Smirnov S. A.,Betelin V. B.,Kwon K.-H.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Advances in Optoelectronic Technology and Industry, London: Taylor and Francis Group, 2020.

2. Saji, K.J. and Jayaraim, K., Oxide Thin Film Transistors, New York: Nova Science, 2017.

3. Advanced Plasma Processing Technology, New York: Wiley, 2008.

4. Lieberman, M.A. and Lichtenberg, A.J., Principles of Plasma Discharges and Materials Processing, New York: Wiley, 2005.

5. Garay, A.A., Hwang, S.M., and Chung, C.W., Inductive coupled plasma reactive ion etching characteristics of TiO2 thin films, Thin Solid Films, 2015, vol. 587, pp. 20–27.

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