Superior Performance of Gate Workfunction and Gate Dielectric Engineered Trapezoidal FinFET in the Presence of Trap Charges
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-1570-2_2
Reference8 articles.
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2. Mangesh, S., Chopra, P.K., Saini, K.K.: Analysis of extended pile gate Trapezoidal Bulk FinFET. IETE J. Res. (2019). https://doi.org/10.1080/03772063.2019.1579678
3. Aouaj, A., Bouziane, A., Nouacr, A.: Analytical Vth and S models for (DMG-GC stack) surrounding-gate MOSFET. Int. J. Electron. 99(1) (2012)
4. Auth, C.P., Plummer, J.D.: Scaling theory for cylindrical fully depleted, surrounding gate MOSFETs including effective conducting path effect (ECPE). Microelectron. Eng. 77, 175–183 (2005). https://doi.org/10.1016/j.mee.2004.10.005
5. Wu, X., Chan, P.C.H.: Impacts of nonrectangular Fin cross section on the electrical characteristics of FinFET. IEEE Trans. Electron Devices 52(1) (2005)
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1. Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs;Silicon;2024-01-04
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