Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02835-3.pdf
Reference33 articles.
1. Banerjee K, Lin SC, Srivastava N (2006) Electrothermal engineering in the nanometer era: from devices and interconnects to circuits and systems. In: Proceedings of the 2006 Asia and South Pacific Design Automation Conference, pp 223–230
2. Usha C, Vimala P (2019) An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions. AEU-Int J Electr Commun 110:152877
3. Shukla S, Gill SS, Kaur N, Jatana HS, Nehru V (2017) Comparative triangular FinFET. Active and passive electronic components. https://doi.org/10.1155/2017/5947819
4. Giacomini R, João A (2008) Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects. J Electrochem Soc 155(4):H213
5. Goyal P, Kaur H (2021) Superior performance of gate workfunction and gate dielectric engineered trapezoidal FinFET in the presence of trap charges. In: Microelectronics, Circuits and Systems: Select Proceedings of 7th International Conference on Micro2020, pp 13–23. Springer Singapore
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