Radiation Tolerant Memory Cell for Aerospace Applications-Reference-Cited by-同舟云学术

Radiation Tolerant Memory Cell for Aerospace Applications

Published:2021 Issue: Volume: Page:101-110
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
language:
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Author:

Sahu Pawan Kumar,Koushik Sparsh,Dubey Shashank Kumar,Islam Aminul

Publisher

Springer Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-16-1570-2_10

Reference10 articles.

1. Baumann, R.C.: Radiation-induced soft errors in advanced semiconductor technologies. IEEE Trans. Device Mater. Reliab. 5(3), 305–316 (2005)

2. Seo, D., Han, J.W., Kim, J., Chang, I.J.: A 28mn FD-SOI 4KB radiation-hardened 12T SRAM macro with 0.6~1V wide dynamic voltage scaling for space applications. In: 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 133–134. Tainan (2018)

3. Peng, C., et al.: Radiation-hardened 14T SRAM bitcell with speed and power optimized for space application. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 27(2), 407–415 (2019)

4. Lin, D., et al.: A novel SEU tolerant memory cell for space applications. IEICE Electron. Express 15(17), 1–8 (2018)

5. Jahinuzzaman, S.M., Rennie, D.J., Sachdev, M.: A soft error tolerant 10T SRAM bit-cell with differential read capability. IEEE Trans. Nucl. Sci. 56(6), 3768–3773 (2009)

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