Spin-Transfer Torque MRAM with Emerging Sensing Techniques
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-7993-4_2
Reference30 articles.
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3. Atasoyu M, Altun M, Ozoguz S (2019) Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs. Microelectron J 89:30–36
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced the performance of lead-free material-based magnetoresistance random access memory;Physica Scripta;2024-09-05
2. Survey On the Sensing Techniques Used for Spin Transfer Torque MRAM;Journal of The Institution of Engineers (India): Series B;2024-07-18
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