Survey On the Sensing Techniques Used for Spin Transfer Torque MRAM
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Springer Science and Business Media LLC
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https://link.springer.com/content/pdf/10.1007/s40031-024-01111-1.pdf
Reference84 articles.
1. P. Jangra, M. Duhan, Performance-based comparative study of existing and emerging non-volatile memories: a review. J. Opt. 52(4), 2395–2409 (2022)
2. X. Fong, Y. Kim, R. Venkatesan, S.H. Choday, A. Raghunathan, K. Roy, Spin-transfer torque memories: devices, circuits, and systems. Proc. IEEE 104(7), 1449–1488 (2016)
3. K.L. Wang, J.G. Alzate, P. KhaliliAmiri, Low-power non-volatile spintronic memory: STT-RAM and beyond. J. Phys. D Appl. Phys. 46(7), 074003 (2013)
4. S. Kumari, R. Yadav, Spin-transfer torque mram with emerging sensing techniques, in Recent Developments in Electrical and Electronics Engineering: Select Proceedings of ICRDEEE 2022, (Singapore: Springer Nature Singapore, 2023), pp. 15–25
5. D.-S. Yoon et al., Future direction for a diffusion barrier in future high-density volatile and nonvolatile memory devices. Crit. Rev. Solid State Mater. Sci. 27(3–4), 143–226 (2002)
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