Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions-Reference-Cited by-同舟云学术

Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions

Published:2021-12 Issue: Volume:186 Page:108103
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fiorentini S.,Ender J.,Selberherr S.,de Orio R.L.,Goes W.,Sverdlov V.

Funder

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Bundesministerium für Digitalisierung und Wirtschaftsstandort

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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2. 22 nm STT-MRAM for reflow and automotive uses with high yield, reliability, and magnetic immunity and with performance and shielding options;Gallagher;In: Proc IEDM Conf,2019

3. Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node;Sakhare;In: Proc IEDM Conf,2018

4. Demonstration of a reliable 1 Gb standalone spin-transfer torque MRAM for industrial applications;Aggarwal;In: Proc IEDM Conf,2019

5. 1 Gbit high density embedded STT-MRAM in 28nm FDSOI technology;Lee;In: Proc IEDM Conf,2019

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