Analysis of RSNM and WSNM of 6T SRAM Cell Using Ultra Thin Body FD-SOI MOSFET

Author:

Mishra Vimal Kumar,Yadava Narendra,Nigam Kaushal,Bansal Bajrang,Chauhan R. K.

Publisher

Springer Singapore

Reference12 articles.

1. Andrei, P., Sachdev, M.: CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies. Springer (2008)

2. International Technology Roadmap for Semiconductors, Edition of ITRS. (2016)

3. Ebrahimi, B., Zeinolabedinzadeh, S., Kusha, A.A.: Low Standby power and robust FinFET based SRAM design. In: Symposium on VLSI, ISVLSI’08. IEEE Computer Society Annual, pp. 185–190. IEEE (2008)

4. Mishra, V.K., Chauhan, R.K.: Performance analysis of fully depleted ultra thin body (FD UTB SOI MOSFET) based CMOS inverter circuit for low power digital applications. In: Advances in Intelligent System and Computing, pp. 375–382 (2016)

5. Cheng, K.G., Khakifirooz, A.: Fully depleted SOI (FDSOI) technology. Sci. China Inf. Sci. 59, 1–15 (2016)

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Certain investigations in achieving low power dissipation for SRAM cell;Microprocessors and Microsystems;2020-09

2. Analysis of SRAM cell design;Proceedings of the Third International Conference on Advanced Informatics for Computing Research - ICAICR '19;2019

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