Author:
Cheng Kangguo,Khakifirooz Ali
Publisher
Springer Science and Business Media LLC
Reference78 articles.
1. Semiconductor Industry Association Global Sales Report. http://www.semiconductors.org/industry statistics/global sales report/
2. Moore G E. Cramming more components onto integrated circuits. Electronics, 1965, 38: 82–85
3. Auth C, Allen C, Blattner A, et al. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors. In: Proceedings of VLSI 2012 Symposium on Technology (VLSIT), Honolulu, 2012. 131–132
4. Dennard R H, Gaensslen F H, Rideout V L, et al. Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J Solid-State Circuits, 1974, 9: 256–268
5. Wann H, Ko P K, Hu C. Gate-induced band-to-band tunneling leakage current in LDD MOSFETs. In: Technical Digest of International Electron Devices Meeting, San Francisco, 1992. 147–150
Cited by
48 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献