The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT-Reference-Cited by-同舟云学术

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The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

Published:2011-12-14 Issue:1 Volume:55 Page:40-43
ISSN:1674-7348
Container-title:Science China Physics, Mechanics and Astronomy
language:en
Short-container-title:Sci. China Phys. Mech. Astron.

Author:

Bi ZhiWei,Feng Qian,Zhang JinCheng,Lü Ling,Mao Wei,Gu WenPing,Ma XiaoHua,Hao Yue

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11433-011-4572-x.pdf

Reference14 articles.

1. Ambacher O, Smart J, Shealy J R, et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys, 1999, 85: 3222–3233

2. Miller E J, Schaadt D M, Yu E T, et al. Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy. J Appl Phys, 2003, 94: 7611–7615

3. Kordos P, Heidelberger G, Bernat J, et al. High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors. Appl Phys Lett, 2005, 87: 143501

4. Yue Y Z, Hao Y, Feng Q, et al. Study of AlGaN/GaN MOS-HEMT with ultrathin Al2O3 dielectric. Sci China Ser E, 2009, 39: 239–243

5. Liu C, Chor E F, Tan L S. Investigations of HfO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Appl Phys Lett, 2006, 88: 173504

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs;Radiation Physics and Chemistry;2021-07

2. Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

3. Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs;IEEE Electron Device Letters;2017-05

4. Silicon/HfO2 interface: Effects of gamma irradiation;AIP Conference Proceedings;2016

5. Silicon/HfO2 interface: Effects of proton irradiation;AIP Conference Proceedings;2015

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