Silicon/HfO2 interface: Effects of gamma irradiation-Reference-Cited by-同舟云学术

Silicon/HfO2 interface: Effects of gamma irradiation

Published:2016 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Maurya Savita

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Reference5 articles.

1. Total ionizing dose effects in MOS oxides and devices

2. The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

3. Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices

4. Zhi Wei Bi, Qian Feng, Jin Cheng Zhang, Ling Lü, Wei Mao, Wen Ping Gu, Xiao Hua Ma, Yue Hao, Sci.China: Phy. Mech. and Astr, 55, 1, (2012).

5. S Maurya, Study of Atomic Layer Deposited HfO2/Si Interfaces for their Quality, Reliability and Radiation based Interface Modifications, PhD Dissertion, IIIT-Allahabad, 2015.

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1. Synergistic effects in MOS capacitors with an Au/HfO2–SiO2/Si structure irradiated with neutron and gamma ray;Journal of Physics D: Applied Physics;2021-12-15

2. Radiation-induced charge trapping in Si-MOS capacitors with HfO2/SiO2 gate dielectrics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09

3. Effect of zero bias, 2.7 MeV proton irradiation on HfO2;Journal of Radioanalytical and Nuclear Chemistry;2018-10-03

4. Study of γ-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS;Superlattices and Microstructures;2018-08

5. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications;Journal of Electronic Materials;2018-04-02