Radiation-induced charge trapping in Si-MOS capacitors with HfO2/SiO2 gate dielectrics
Author:
Funder
China Academy of Engineering Physics
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference38 articles.
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2. Total ionizing dose response of hafnium-oxide based MOS devices to low-dose-rate gamma ray radiation observed by pulse CV and on-site measurements;Mu;IEEE Trans. Nucl. Sci.,2017
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4. Review and Perspective of Hf-based High-k Gate Dielectrics on Silicon;He;Crit. Rev. Solid State Mater. Sci.,2012
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