利用界面工程来调控铁电隧道忆阻器的生物突触行为-Reference-Cited by-同舟云学术

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利用界面工程来调控铁电隧道忆阻器的生物突触行为

Published:2022-10-28 Issue:4 Volume:66 Page:1559-1568
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Zhao Jianhui,Yu Tianqi,Shao Yiduo,Guo Rui,Lin Weinan,Liu Gongjie,Zhou Zhenyu,Pei YiFei,Wang Jingjuan,Sun Kaixuan,Yan Xiaobing,Chen Jingsheng

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2275-7.pdf

Reference31 articles.

1. Ma C, Luo Z, Huang W, et al. Sub-nanosecond memristor based on ferroelectric tunnel junction. Nat Commun, 2020, 11: 1439

2. Wen Z, Li C, Wu D, et al. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions. Nat Mater, 2013, 12: 617–621

3. Boyn S, Grollier J, Lecerf G, et al. Learning through ferroelectric domain dynamics in solid-state synapses. Nat Commun, 2017, 8: 14736

4. Chanthbouala A, Crassous A, Garcia V, et al. Solid-state memories based on ferroelectric tunnel junctions. Nat Nanotech, 2011, 7: 101–104

5. Guo R, Lin W, Yan X, et al. Ferroic tunnel junctions and their application in neuromorphic networks. Appl Phys Rev, 2020, 7: 011304

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3. Multi-factors-regulated memristor based on Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 for artificial neural network;Materials Today Advances;2024-06

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5. Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications;Applied Physics Reviews;2024-04-08

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