High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step-Reference-Cited by-同舟云学术

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High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

Published:1999-04-01 Issue:4 Volume:68 Page:461-465
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Möller H.,Eickhoff M.,Rapp M.,Grueninger H.W.,Krötz G.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050924.pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combined Density Functional Theory and Microkinetics Study to Predict Optimum Operating Conditions of Si(100) Surface Carbonization by Acetylene for High Power Devices;The Journal of Physical Chemistry Letters;2021-05-10

2. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05

3. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail;Critical Reviews in Solid State and Materials Sciences;2014-09-25

4. Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications;MRS Proceedings;2012

5. Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing;Journal of The Electrochemical Society;2004

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