Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing-Reference-Cited by-同舟云学术

Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing

Published:2004 Issue:2 Volume:151 Page:G136
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Stoemenos J.,Panknin D.,Eickhoff M.,Heera V.,Skorupa W.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. SiC Microwave Power Devices

3. High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers

4. A. M. Strel’chuck, N. S. Savkina, A. Kuznetsov, and A. A. Lebedev, inThe 3rd European Conference on Silicon Carbide and Related Material (ECSCRM), Paper WeP-72, Sept 3-7, 2000, Kloster Banz, Germany.

5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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3. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail;Critical Reviews in Solid State and Materials Sciences;2014-09-25

4. Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing;Materials Science Forum;2008-09

5. Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings;Journal of Applied Physics;2008-08-15