Author:
Sadi Toufik,Kivisaari Pyry,Oksanen Jani,Tulkki Jukka
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Albrecht, J.D., Wang, R.P., Ruden, P.P., Farahmand, M., Brennan, K.F.: Electron transport characteristics of GaN for high temperature device modeling. J. Appl. Phys. 83(9), 4777–4781 (1998)
2. Bertazzi, F., Goano, M., Zhou, X., Calciati, M., Ghione, G., Matsubara, M., Bellotti, E.: Comment on direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. arXiv:1305.2512v3 , (2013)
3. Bertazzi, F., Moresco, M., Bellotti, E.: Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: a full band Monte Carlo model. J. Appl. Phys. 106, 063718 (2009)
4. Bertazzi, F., Goano, M., Bellotti, E.: Numerical analysis of indirect Auger transitions in InGaN. Appl. Phys. Lett. 101, 011111 (2012)
5. David, A., Grundmann, M.J., Kaeding, J.F., Gardner, N.F., Mihopoulos, T.G., Krames, M.R.: Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 92, 053502 (2008)
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