On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs-Reference-Cited by-同舟云学术

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On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs

Published:2017-02-15 Issue:6 Volume:3 Page:1600494
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kivisaari Pyry¹²,Sadi Toufik³,Li Jingrui⁴,Rinke Patrick⁴,Oksanen Jani¹

Affiliation:

1. Engineered Nanosystems Group; Aalto University; P.O. Box 12200 FI-00076 Aalto Finland

2. Division of Solid State Physics and NanoLund; Lund University; P.O. Box 118 SE-22100 Lund Sweden

3. Electronic and Nanoscale Engineering; School of Engineering; University of Glasgow; Glasgow G12 8LT Scotland UK

4. COMP/Department of Applied Physics; Aalto University; P.O. Box 11100 FI-00076 Aalto Finland

Funder

Nokia Foundation

Finnish Cultural Foundation, Walter Ahlström Foundation

Suomen Akatemia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Prospects for LED lighting

2. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

3. Nanowire-Based Visible Light Emitters, Present Status and Outlook

4. Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

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