Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3213363
Reference65 articles.
1. GaN avalanche photodiodes
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3. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
4. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
5. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
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