Author:
Misiuk A.,Ratajczak J.,Barcz A.,Bak-Misiuk J.,Shalimov A.,Surma B.,Wnuk A.,Jagielski J.,Antonova I. V.
Reference10 articles.
1. Misiuk, A., Bak-Misiuk, J., Barcz, A., Romano-Rodriguez, A., Antonova, I.V., Popov, V.P., Londos, C.A. and Jun, J. (2001) Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon, Int. J. Hydrogen Energy
26, 483–488.
2. Job, R., Ulyashin, A.G., Fahrner, W.R., Ivanov, A.I. and Palmetshofer, L. (2001) Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen-and helium — implanted Czochralski silicon, Appl. Phys. A
72, 325–332.
3. Misiuk, A., Barcz, A., Raineri, V., Ratajczak, J., Bak-Misiuk, J., Antonova, I.V., Wierzchowski, W. and Wieteska, K. (2001) Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen, Physica B
308–310, 317–320.
4. Misiuk, A. (2000) High pressure — high temperature treatment to create oxygen nano — clusters and defect in single crystalline silicon, Mater. Phys. Mech.
1, 119–126.
5. Wieteska, K., Wierzchowski, W., Graeff, W., Misiuk, A., Barcz, A., Bryja, L. and Popov, V.P. (2002) X-ray synchrotron studies of nanostructure formation in high temperature-pressure treated silicon implanted with hydrogen, Acta Phys Polon A
102, 239–244.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献