X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen-Reference-Cited by-同舟云学术

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X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen

Published:2002-08 Issue:2 Volume:102 Page:239-244
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Wieteska K.¹,Wierzchowski W.²,Graeff W.³,Misiuk A.⁴,Barcz A.⁴,Bryja L.⁵,Popov V.P.⁶

Affiliation:

1. Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

2. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

3. HASYLAB at DESY, Notkestraße 85, 22603 Hamburg, Germany

4. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

5. Wrocław Technical University, Wyb. Wyspiańskiego 27, 53-370 Wrocław, Poland

6. Institute of Semiconductor Physics, RAS, Lavrentieva 13, 630090 Novosibirsk, Russia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Stress on Accumulation of Hydrogen and Microstructure of Silcon co-Implanted with Hydrogen and Helium;Hydrogen Materials Science and Chemistry of Carbon Nanomaterials;2004

2. Synchrotron topography of high temperature–pressure treated silicon implanted with helium;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-01

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