Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon-Reference-Cited by-同舟云学术

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Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

Published:2001-05 Issue:5 Volume:26 Page:483-488
ISSN:0360-3199
Container-title:International Journal of Hydrogen Energy
language:
Short-container-title:

Author:

Misiuk A

Publisher

Elsevier BV

Subject

Energy Engineering and Power Technology,Condensed Matter Physics,Fuel Technology,Renewable Energy, Sustainability and the Environment

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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