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The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

  • Published:1997-11 Issue:11 Volume:26 Page:1361-1364
  • ISSN:0361-5235
  • Container-title:Journal of Electronic Materials
  • language:en
  • Short-container-title:Journal of Elec Materi

Author:

Jones K. S.,Chen J.,Bharatan S.,Jackson J.,Rubin L.,Puga-Lambers M.,Venables D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic modeling of laser-related phenomena;Laser Annealing Processes in Semiconductor Technology;2021

2. Atomistic Simulations in Materials Processing;Springer Series in MATERIALS SCIENCE;2004

3. Atomistic analysis of defect evolution and transient enhanced diffusion in silicon;Journal of Applied Physics;2003-07-15

4. Modeling of vacancy cluster formation in ion implanted silicon;Journal of Applied Physics;2001-05

5. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion;Applied Physics Letters;1999-04-05
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