Modeling of vacancy cluster formation in ion implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352680
Reference18 articles.
1. The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon
2. Transient enhanced diffusion of Sb and B due to MeV silicon implants
3. Structural and binding properties of vacancy clusters in silicon
4. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model
5. An approach using a subamorphizing threshold dose silicon implant of optimal energy to achieve shallower junctions
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2. W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations;Journal of Electronic Materials;2018-04-25
3. Simulation of the proton implantation process in silicon;physica status solidi (c);2016-07-19
4. First-Principles Prediction of Optical Absorption Enhancement for Si Native Defect Clusters under Biaxial Strain;Electrochemical and Solid-State Letters;2011
5. Kinetic Lattice Monte Carlo Simulations of Vacancy Diffusion in Silicon Below the Melting Point;Journal of Computational and Theoretical Nanoscience;2010-03-01
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