Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes-Reference-Cited by-同舟云学术

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

Published:1998-10 Issue:10 Volume:27 Page:1128-1135
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Khemka V.,Chow T. P.,Gutmann R. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0150-z.pdf

Reference34 articles.

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2. A.K. Agarwal, G. Augustine, V. Balakrishna, C.D. Brandt, A.A. Burk, Li-Shu Chen, R.C. Clarke, P.M. Esker, H.M. Hobgood, R.H. Hopkins, A.W. Morse, L.B. Rowland, S. Seshadri, R.R. Siergiej, T.J. Smith, Jr. and S. Sriram, Intl. Electron Dev. Meet. Dig.225 (1996).

3. D. Alok, K. Makeshwar and B.J. Baliga, J. Electron. Mater. (26) 3, 108 (1997).

4. D. Alok, R. Egloff and E. Arnold, Proc. of the Intl. Conf. on SiC III-N and Related Materials-1997, Stockholm, Sweden.

5. P.H. Yih, V. Saxena and A.J. Steckl, Proc. 6th Intl. Conf. on SiC and Related Materials-1995, Kyoto, Japan, p. 621.

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