Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)-Reference-Cited by-同舟云学术

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Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)

Published:2016-09 Issue:9 Volume:63 Page:3439-3444
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tega Naoki,Hisamoto Digh,Shima Akio,Shimamoto Yasuhiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7548080/07534762.pdf?arnumber=7534762

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical-Channel Fin-SiC (VC Fin-SiC) With Partially Highly Doped JFET for 3.3-kV Applications;IEEE Transactions on Electron Devices;2024-09

2. Development of Wide-JFET Trench-Etched Double-Diffused MOS (TED-MOS) for High-Voltage Applications;IEEE Transactions on Electron Devices;2024-04

3. Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS;Micromachines;2023-09-30

5. Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

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