Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference23 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Process Technology for Silicon Carbide Devices
3. SiC Integrated MOSFETs
4. Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
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1. Study of SiC trench MOSFET switching performance;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17
2. 4H-SiC Tapered-Gate MOSFET with Low ON-resistance and Hight Current Density;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06
3. V-groove trench gate SiC MOSFET with a double reduced surface field junction termination extensions structure;Japanese Journal of Applied Physics;2019-03-04
4. Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0$\bar{3}$3$\bar{8}$) interfaces;Japanese Journal of Applied Physics;2019-02-22
5. Dry Etching of High Aspect Ratio 4H-SiC Microstructures;ECS Journal of Solid State Science and Technology;2017
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