A 22 nm FinFET based 6T-SRAM cell design with scaled supply voltage for increased read access time-Reference-Cited by-同舟云学术

A 22 nm FinFET based 6T-SRAM cell design with scaled supply voltage for increased read access time

Published:2015-04-28 Issue:1 Volume:84 Page:119-126
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Manju I.,Senthil Kumar A.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

http://link.springer.com/content/pdf/10.1007/s10470-015-0547-6.pdf

Reference33 articles.

1. Lin, C. P., Tseng, P. C., Chiu, Y. T., Lin, S. S., Cheng, C. C., Fang, H. C., Chao, W.M., & Chen, L. G. (2006). A 5mW MPEG4 SP encoder with 2D bandwidth-sharing motion estimation for mobile applications. In IEEE International Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers.

2. Alioto, M. (2012). Ultra-low power VLSI circuit design demystified and explained: A tutorial. IEEE Transactions on Circuits and Systems I: Regular Papers, 59(1), 3–29.

3. Keerthi, R. & Chen, C. (2008). Stability and static noise margin analysis of low-power SRAM. In Instrumentation and Measurement Technology Conference Proceedings.

4. Mukherjee, D., Mondal, H. K., & Reddy, B. V. R. (2010). Static noise margin analysis of SRAM cell for high speed application. IJCSI International Journal of Computer Science Issues, 7(5), 1–6.

5. Hodges, D.A., Jackson, H. G., & Saleh, R. A. (2003) Analysis and design of digital integrated circuits. Berkeley, McGraw Hill Science Engineering (pp. 3–118).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A sub-threshold 10T FinFET SRAM cell design for low-power applications;AEU - International Journal of Electronics and Communications;2022-12

2. Process evaluation in FinFET based 7T SRAM cell;Analog Integrated Circuits and Signal Processing;2021-09-01

3. A Low-Leakage 6T SRAM Cell for In-Memory Computing with High Stability;2021 29th Iranian Conference on Electrical Engineering (ICEE);2021-05-18

4. Performance analysis for reliable nanoscaled FinFET logic circuits;Analog Integrated Circuits and Signal Processing;2021-01-03

5. A single-ended low leakage and low voltage 10T SRAM cell with high yield;Analog Integrated Circuits and Signal Processing;2020-06-08