Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-022-3465-2.pdf
Reference39 articles.
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3. Gong F, Luo W, Wang J, et al. High-sensitivity floating-gate phototransistors based on WS2 and MoS2. Adv Funct Mater, 2016, 26: 6084–6090
4. Lee I, Rathi S, Lim D, et al. Gate-tunable hole and electron carrier transport in atomically thin dual-channel WSe2/MoS2 heterostructure for ambipolar field-effect transistors. Adv Mater, 2016, 28: 9519–9525
5. Lee K H, Kim T H, Shin H J, et al. Highly efficient photocurrent generation from nanocrystalline graphene-molybdenum disulfide lateral interfaces. Adv Mater, 2016, 28: 1793–1798
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