Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors-Reference-Cited by-同舟云学术

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

Published:2016-09-13 Issue:43 Volume:28 Page:9519-9525
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lee Inyeal¹,Rathi Servin¹,Lim Dongsuk¹,Li Lijun¹,Park Jinwoo¹,Lee Yoontae¹,Yi Kyung Soo²,Dhakal Krishna P.³,Kim Jeongyong³,Lee Changgu⁴,Lee Gwan-Hyoung⁵,Kim Young Duck⁶,Hone James⁶,Yun Sun Jin⁷,Youn Doo-Hyeb⁷,Kim Gil-Ho¹

Affiliation:

1. Samsung-SKKU Graphene Center; Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering; Sungkyunkwan University; Suwon 16419 Korea

2. Department of Physics; Pusan National University; Busan 46241 Korea

3. Center for Integrated Nanostructure Physics; Institute for Basic Science (IBS); Department of Energy Science; Sungkyunkwan University; Suwon 16419 Korea

4. Department of Mechanical Engineering; Sungkyunkwan University; Suwon 16419 Korea

5. Department of Material Science and Engineering; Yonsei University; Seoul 03722 Korea

6. Department of Mechanical Engineering; Columbia University; New York NY 10027 USA

7. ICT Components and Materials Technology Research Division; Electronics and Telecommunications Research Institute; Daejeon 34129 Korea

Funder

Ministry of Education, Science and Technology

Ministry of Science ICT and Future Planning

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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