High-Sensitivity Floating-Gate Phototransistors Based on WS2and MoS2-Reference-Cited by-同舟云学术

High-Sensitivity Floating-Gate Phototransistors Based on WS2and MoS2

Published:2016-06-20 Issue:33 Volume:26 Page:6084-6090
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Gong Fan¹²,Luo Wenjin¹,Wang Jianlu¹,Wang Peng¹,Fang Hehai¹,Zheng Dingshan²,Guo Nan¹,Wang Jingli²,Luo Man¹,Ho Johnny C.³,Chen Xiaoshuang¹,Lu Wei¹,Liao Lei²,Hu Weida¹

Affiliation:

1. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; Shanghai 200083 China

2. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 China

3. Department of Physics and Materials Science; City University of Hong Kong; Hong Kong SAR China

Funder

Major State Basic Research Development Program

National Natural Science Foundation of China

Fund of Shanghai Science and Technology Foundation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Ultrafast graphene photodetector

2. Single-layer MoS2 transistors

3. Light–matter interaction in a microcavity-controlled graphene transistor

4. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

5. Graphene photodetectors with ultra-broadband and high responsivity at room temperature

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