Author:
Liu HongXia,Kuang QianWei,Luan SuZhen,Zhao Aaron,Tallavarjula Sai
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. Ribes G, Mitard J, Denais M, et al. Review on high-k dielectrics reliability issues. IEEE Trans Device Materials Reliab, 2005, 5: 5–19
2. Kim Y M, Lee J C. Reliability characteristics of high-k dielectrics. Microelectr Reliab J, 2004, 44: 183–193
3. Deshpande A S. Fundamental studies on alternative high-k gate dielectric materials. Dissertation for the Doctoral Degree. Chicago: University of Illinois at Chicago, 2005. 133–138
4. Kaushik V S, Delabie A, Pourtois G, et al. Estimation of fixed charge densities in hafnium-silicate gate dielectrics. IEEE Trans Elect Device Lett, 2006, 53: 2627–2633
5. Zhang Z H, Campbell S A. Effect of deposition chemistry and annealing on charge in HfO2 stacks. IEEE Trans Elect Device Lett, 2006, 27: 448–450
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