Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States-Reference-Cited by-同舟云学术

Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

Published:2016-10-01 Issue:5 Volume:16 Page:266-272
ISSN:1335-8871
Container-title:Measurement Science Review
language:en
Short-container-title:

Author:

Ryazantsev D. V.¹,Grudtsov V. P.¹

Affiliation:

1. Scientific and Manufacturing Complex “Technological Center”, Georgievsky prospect 5, 124498, Zelenograd, Moscow, Russian Federation

Abstract

Abstract An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to extract the parameters of test MOS structures with ultrathin gate dielectrics. The applicability of the algorithm for the determination of distribution function of DOS and finding the donor defect level in silicon is shown.

Publisher

Walter de Gruyter GmbH

Subject

Instrumentation,Biomedical Engineering,Control and Systems Engineering

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