Author:
Roy Chandramaulashwar,Islam Aminul
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference47 articles.
1. Amelifard B, Fallah F, Pedram M (2008) Leakage minimization of SRAM cells in a dual-Vt and dual-Tox technology. In: IEEE transactions on very large scale integration (VLSI) systems, vol 16, no 7, pp 851–886
2. Anand N, Roy C, Islam A (2014) Highly stable subthreshold single-ended 7T SRAM cell. In: 2014 2nd international conference on emerging technology trends in electronics, communication and networking, pp 1–4.
https://doi.org/10.1109/et2ecn.2014.7044928
3. Anand N, Sinha A, Roy C, Islam A (2015) Design of a stable read-decoupled 6T SRAM cell at 16-Nm technology node. In: 2015 IEEE international conference on computational intelligence & communication technology, Ghaziabad, pp 524–528.
https://doi.org/10.1109/cict.2015.117
4. Calhoun BH, Chandrakasan A (2007) A 256 kb subthreshold SRAM in 65 nm CMOS. IEEE J Solid State Circuits 42(3):680–688
5. Calhoun et al (2010) Flexible circuits and architectures for ultralow power. Proc IEEE 98(2):267–282
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A low power static noise margin enhanced reliable 8 T SRAM cell;Microsystem Technologies;2024-04-20
2. A FinFET-based low-power, stable 8T SRAM cell with high yield;AEU - International Journal of Electronics and Communications;2024-02
3. Circuit-level design of radiation tolerant memory cell;AEU - International Journal of Electronics and Communications;2024-02
4. Stability Aware Low-Power 8 T SRAM Cell Using CNFET in 22 nm Technology;Lecture Notes in Electrical Engineering;2024
5. Power Aware 10T Static Random-Access Memory Design;2023 2nd International Conference on Vision Towards Emerging Trends in Communication and Networking Technologies (ViTECoN);2023-05-05